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Silicon

Spectra in the near and mid-infrared ranges of the infrared spectrum are well-transmitted by silicon materials. They also have exceptional mechanical strength and are quite chemically inert. Infrared windows, infrared lens substrates, and filter substrates are frequently made of silicon. When used with laser mirrors with weight-sensitive designs, their excellent heat conductivity and light weight are also advantageous. Silicon can be used by Alfa Chemistry to create optical components that are made to order and can be almost any size and shape. Please get in touch with us if you require assistance.

Advantages and Uses of Silicon Materials

Silicon materials are excellent for IR LED lenses and can be used for windows and lenses in the 2 ~ 6 μm range. The strong heat conductivity and low weight of silicon, which has a refractive index near 3.4 over the whole range, make it a desirable material for IR or FTIR applications. For lasers and IR silicon viewports, silicon is also employed as a high-reflectivity mirror substrate.

Transmission spectrum of crystalline silicon from the visible to the near-IR.Fig 1. Transmission spectrum of crystalline silicon from the visible to the near-IR. (Serpenguzel A, et al. 2010)

Optical grade silicon typically has a resistivity of 10 to 40 Ohm*cm, higher than most semiconductor applications, for optimal transmission over 10 nm. On special order, silicon materials with extremely high resistivity (>1000 Ohm*cm) are available, particularly for terahertz applications. It is typical for silicon materials to contain some oxygen when they are developed using the Czochralski pulling method (CZ), which produces an absorption band of 9 microns. This silicon material is primarily utilized as a substrate for the manufacture of filters and as an optical window in the 3 to 5 nm range.

Alfa Chemistry also offers floating zone (FZ) materials that lack this absorption potential if needed. Silicon also has a passband of 30 to 100 microns, which is only effective in very high resistivity uncompensated materials. The doping is usually boron (p-type) and phosphorus (n-type).

Transmittance of float zone silicon compared to float zone silicon with AR coating and filter.Fig 2. Transmittance of float zone silicon compared to float zone silicon with AR coating and filter. (Hilton A, et al. 2016)

Different types of silicon materials are available:

  • Czochralski standard low-cost n-type (resistivity >10 Ohm*cm) or p-type (>20 Ohm*cm)
  • High resistivity floating zone silicon with resistivity >1000 Ohm*cm

Properties of Silicon Materials

Density2.33 g/cc
Molecular Weight28.09
SolubilityInsoluble in Water
Class/StructureCubic diamond, Fd3m
Melting Point1420 ℃
HardnessKnoop 1150
Refractive Index3.4223 @ 5 μm
Transmission Range1.2 ~ 15 μm
Reflection Loss46.2% at 5 μm
Absorption Coefficient0.01 cm-1 at 3 μm
dn/dT160 x 10-6/℃
Youngs Modulus (E)131 GPa
Shear Modulus (G)79.9 GPa
Bulk Modulus (K)102 GPa
Apparent Elastic Limit124.1MPa (18000 psi)
Thermal Expansion2.6x10-6 / at 20℃
Thermal Conductivity163.3 W/m/K at 273 K
Dielectric Constant13 at 10 GHz
Specific Heat Capacity703 J Kg-1 K-1
Poisson Ratio0.266
Elastic CoefficientsC11=167; C12=65; C44=80

About refractive index parameters.
"No" means ordinary light.

µmNoµmNoµmNo
1.3573.49751.3673.49621.3953.4929
1.5303.47951.6603.46961.7093.4664
1.8133.46081.9703.45372.1533.4476
2.3253.44302.7143.43583.0003.4320
3.3033.43003.5003.42844.0003.4257
4.2583.42454.5003.42365.0003.4223
5.5003.42136.0003.42026.5003.4195
7.0003.41897.5003.41868.0003.4184
8.5003.418210.003.417910.503.4178
11.043.4176    

References

  1. Serpenguzel A, et al. (2010). "Silicone Microspheres for VLSI Photonics." VLSI Micro- and Nanophotonics: Science, Technology and Applications. pp.3.1-3.12.
  2. Hilton A, et al. (2016). "WAFER-LEVEL VACUUM PACKAGING OF MICROBOLOMETER-BASED INFRARED IMAGERS." International Wafer-Level Packaging Conference.

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