Yb:YLF Crystals, 20%Doping, Right angle cut

The Yb3+:YLF crystal has a wide emission cross section. YLF crystals are advantageous when high ytterbium ion doping concentrations are required. We can provide different specifications of Yb3+:YLF crystals to support your optical application.

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Catalog Number

ACMA00027504

Product Name

Yb:YLF Crystals, 20%Doping, Right angle cut

Doping

0.2

Wedge Of Ends

Right angle cut

Width

3 mm

Height

3 mm

Length

2 mm

Orientation

a-cut

DimensionTolerance

W±0.1mm/H±0.1mm/L±0.2mm

Coating

AR/AR@960 nm+1000-1060 nm

Flatness

<λ/10@632.8 nm

Parallelism

< 10 arcsec

Perpendicularity

<10 arcmin

Surface Quality

10-5 S-D

ClearAperture

>90%

Crystal Structure

Tetragonal

Density

3.95 g/cm³

Wavelength

1017 nm (laser wavelength)

Refractive Indices

(@1040nm) ~1.4

Expansion Coefficient

(Thermal expansion coefficient) 8×10^-6 (||c) K^-1 13×10^-6 (||a) K^-1

Thermal Optical Coefficient

(dn/dT) -4.6×10^-6 (||c) K^-1, -6.6×10^-6 (||a) K^-1

Thermal Conductivity

6 W/m/K

Damage Threshold

(Laser-induced) >10 J/cm²@1030 nm, 10 ns

Chamfers

<0.1 mm at 45˚

Absorption Cross Section

(at peak) 10.5×10^-21 cm²

Bandwidth

(absorption bandwidth at a peak wavelength) ～10 nm

Emission Cross Section

(@1053) 4.1×10^-21 cm²

Absorption Wavelength

960 nm

Moh'sHardness

5

MSDS

COA

Spec Sheet

Features And Benefits

1. Simple electronic structure precludes excited state absorption and various detrimental quenching processes 2. Broad and smooth emission spectrum 3. The absorption spectrum closely matches the emission wavelength of the InGaAs laser diode 4. Wide tuning range 5. Low quantum defects

Application

Diode-pumped mode-locked lasers; Thin-disk lasers

• Catalog Number: ACMA00027504
• Product Name: Yb:YLF Crystals, 20%Doping, Right angle cut
• Doping: 0.2
• Wedge Of Ends: Right angle cut
• Width: 3 mm
• Height: 3 mm
• Length: 2 mm
• Orientation: a-cut
• DimensionTolerance: W±0.1mm/H±0.1mm/L±0.2mm
• Coating: AR/AR@960 nm+1000-1060 nm
• Flatness: <λ/10@632.8 nm
• Parallelism: < 10 arcsec
• Perpendicularity: <10 arcmin
• Surface Quality: 10-5 S-D
• ClearAperture: >90%
• Crystal Structure: Tetragonal
• Density: 3.95 g/cm³
• Wavelength: 1017 nm (laser wavelength)
• Refractive Indices: (@1040nm) ~1.4
• Expansion Coefficient: (Thermal expansion coefficient) 8×10^-6 (||c) K^-1 13×10^-6 (||a) K^-1
• Thermal Optical Coefficient: (dn/dT) -4.6×10^-6 (||c) K^-1, -6.6×10^-6 (||a) K^-1
• Thermal Conductivity: 6 W/m/K
• Damage Threshold: (Laser-induced) >10 J/cm²@1030 nm, 10 ns
• Chamfers: <0.1 mm at 45˚
• Absorption Cross Section: (at peak) 10.5×10^-21 cm²
• Bandwidth: (absorption bandwidth at a peak wavelength) ～10 nm
• Emission Cross Section: (@1053) 4.1×10^-21 cm²
• Absorption Wavelength: 960 nm
• Moh'sHardness: 5