BSO Crystals, 10mm*10mm*5mm

Bismuth silicon oxide (BSO) crystals are high-efficiency photoconductors with low dark conductivity that can accumulate large photoinduced space charges. We offer various specifications of BSO crystals. BSO crystals are grown by a modified Czochralski method and are available in pore sizes up to 3 inches in diameter.

Request bulk or custom formats

Catalog Number

ACMA00027653

Product Name

BSO Crystals, 10mm*10mm*5mm

Molecular Formula

Bi12SiO20

Width

10 mm

Height

10 mm

Thickness

5 mm

Orientation

[110]

DimensionTolerance

W±0.2mm/H±0.2mm/Thickness±0.2mm

Parallelism

<30 arcsec

Surface Quality

40-20 S-D

ClearAperture

0.85

Crystal Structure

Cubic, point group 23

Lattice Parameters

10,10 Å

Density

9.2 g/cm³

Refractive Indices

2.54@0.63 µm

Electro Optic Coefficient

r41 = 5 pm/V

Transmission

0.45-6 μm

Chamfers

<0.3 mm at 45°

Optical Activity

42 deg/mm@500 nm

Dielectric Constant

56

Dark Resistance

10¹⁴ Ohm cm

Moh'sHardness

5

MSDS

COA

Spec Sheet

Features And Benefits

High electro-optic coefficient (r41 = 5 pm/V); high phase conjugation efficiency

Application

Huge photoconductivity and electro-optic properties make BSO crystals attractive in a range of applications: spatial light modulators, optical switches, phase conjugate mixers.

• Catalog Number: ACMA00027653
• Product Name: BSO Crystals, 10mm*10mm*5mm
• Molecular Formula: Bi12SiO20
• Width: 10 mm
• Height: 10 mm
• Thickness: 5 mm
• Orientation: [110]
• DimensionTolerance: W±0.2mm/H±0.2mm/Thickness±0.2mm
• Parallelism: <30 arcsec
• Surface Quality: 40-20 S-D
• ClearAperture: 0.85
• Crystal Structure: Cubic, point group 23
• Lattice Parameters: 10,10 Å
• Density: 9.2 g/cm³
• Refractive Indices: 2.54@0.63 µm
• Electro Optic Coefficient: r41 = 5 pm/V
• Transmission: 0.45-6 μm
• Chamfers: <0.3 mm at 45°
• Optical Activity: 42 deg/mm@500 nm
• Dielectric Constant: 56
• Dark Resistance: 10¹⁴ Ohm cm
• Moh'sHardness: 5